型号:

MMBFJ175LT1G

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:JFET SS P-CHAN 25V SOT23
详细参数
数值
产品分类 分离式半导体产品 >> JFET(结点场效应
MMBFJ175LT1G PDF
产品变化通告 Product Obsolescence 21/Jan/2010
产品目录绘图 MOSFET SOT-23-3 Pkg
标准包装 1
系列 -
电流 - 漏极(Idss) @ Vds (Vgs=0) 7mA @ 15V
漏极至源极电压(Vdss) -
漏极电流 (Id) - 最大 -
FET 型 P 沟道
电压 - 击穿 (V(BR)GSS) 30V
电压 - 切断 (VGS 关)@ Id 3V @ 10nA
输入电容 (Ciss) @ Vds 11pF @ 10V(VGS)
电阻 - RDS(开) 125 欧姆
安装类型 表面贴装
包装 剪切带 (CT)
封装/外壳 TO-236-3,SC-59,SOT-23-3
供应商设备封装 SOT-23-3(TO-236)
功率 - 最大 225mW
其它名称 MMBFJ175LT1GOSCT
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